Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures

In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 mu m in the 4H-SiC JBS diode achieved a forward voltage of 1.33 V at 20 A with a laser annealing process using Ni silicide. Using a laser annealing process on a wafer thickness of 100 mu m, an on-resistance decrease of almost 22% was demonstrated. Based on our experimental results, we suggest an alternative laser annealing fabrication scheme to obtain low on-resistance SiC power devices with thin structures after SiC grinding.

Automated summary

In this study, the characteristics of an n-type Ni/SiC ohmic contact on thin SiC wafers were investigated using laser annealing process. The electrical behavior of ohmic contacts was tested in 4H-SiC JBS diode devices. The results showed that a decrease in on-resistance was achieved by using the laser annealing process with Ni silicide.