4.7 Article

Low-temperature transient liquid phase bonding via electroplated Sn/In-Sn metallization

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ELSEVIER
DOI: 10.1016/j.jmrt.2022.06.030

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Electronic materials; Assembly technology; Transient liquid phase reaction; Interfaces; In-Sn Intermetallics

资金

  1. Ministry of Science and Technology [MOST 110-2634-F-002-043]
  2. German Academic Exchange Service (DAAD)

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Sn/In-Sn bonding interfaces obtained through transient liquid phase (TLP) reaction were investigated for low-temperature assembly. Bonding was achieved at temperatures below 150 degrees C and low pressure. Although some voids were formed at the interfaces after bonding, the low eutectic temperature of In-Sn metallization enabled low-temperature bonding. A bonding mechanism for this novel low-temperature In-Sn assembly was proposed.
Sn/In-Sn bonding interfaces obtained by the transient liquid phase (TLP) reaction were investigated for applications in low-temperature assembly. Bonding was achieved at temperatures below 150 degrees C with a low bonding pressure. Although a few voids were formed at the interfaces after bonding, the In-Sn metallization enabled low-temperature bonding due to the low eutectic temperature. A bonding mechanism to achieve this novel In-Sn low-temperature assembly was also proposed. (C) 2022 The Author(s). Published by Elsevier B.V.

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