4.3 Article

The Radon transform as a tool for 3D reciprocal-space mapping of epitaxial microcrystals

期刊

JOURNAL OF APPLIED CRYSTALLOGRAPHY
卷 55, 期 -, 页码 823-836

出版社

INT UNION CRYSTALLOGRAPHY
DOI: 10.1107/S1600576722004885

关键词

Radon transform; X-ray diffraction; patterned Si substrates; Ge microcrystals; reciprocal-space mapping

资金

  1. Czech NanoLab Research Infrastructure by MEYS CR [LM2018110]
  2. project CEITEC 2020 by MEYS CR [LQ1601]
  3. Swiss National Science Foundation [CRS112 147639, 200021L 153558]
  4. Swiss National Science Foundation (SNF) [200021L_153558] Funding Source: Swiss National Science Foundation (SNF)

向作者/读者索取更多资源

This work presents a new method suitable for mapping reciprocal space in three dimensions using standard laboratory equipment. The method utilizes high-resolution X-ray diffraction and 2D X-ray pixel detectors, and the experimental data is processed using Radon transform. It is demonstrated that this technique can be applied for diffraction mapping in reciprocal space even without a highly collimated beam.
This work presents a new approach suitable for mapping reciprocal space in three dimensions with standard laboratory equipment and a typical X-ray diffraction setup. The method is based on symmetric and coplanar high-resolution X-ray diffraction, ideally realized using 2D X-ray pixel detectors. The processing of experimental data exploits the Radon transform commonly used in medical and materials science. It is shown that this technique can also be used for diffraction mapping in reciprocal space even if a highly collimated beam is not available. The application of the method is demonstrated for various types of epitaxial microcrystals on Si substrates. These comprise partially fused SiGe microcrystals that are tens of micrometres high, multiple-quantum-well structures grown on SiGe microcrystals and pyramid-shaped GaAs/Ge microcrystals on top of Si micropillars.

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