Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

beta-Ga2O3 field-effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr-doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from -3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement-mode Ga2O3 FETs.

Automated summary

In this study, beta-Ga2O3 field-effect transistors (FETs) were fabricated with local thinning to change the threshold voltage. Device simulation confirmed that the local thinning structure is an effective method to enable enhancement-mode Ga2O3 FETs.