期刊
CRYSTALS
卷 12, 期 8, 页码 -出版社
MDPI
DOI: 10.3390/cryst12081032
关键词
tungsten-doped zinc oxide (WZO); pulse laser deposition; bandgap; photoluminescence (PL); X-ray photoelectron spectroscopy (XPS)
资金
- Ministry of Science and Technology of Taiwan [110-2637-E-027-002]
1.0 wt.% tungsten-doped zinc oxide (WZO) films were fabricated under different growth temperatures and their properties were discussed. The films showed good transparency and suitable bandgap values.
Utilising a pulse laser deposition technique, 1.0 wt.% tungsten-doped zinc oxide (WZO) films were fabricated under different growth temperatures (200-400 degrees C), and their structural, optical, morphological, and electrical properties were discussed. The crystalline structures of the WZO target and films were examined by X-ray diffraction (XRD) analysis, and preferred orientations along the strong c-axis (002) were strongly observed for all growth temperatures. All WZO films demonstrated transparencies above 75%, along with a wide spectral range (400-700 nm). Their bandgap values ranged between 3.21 and 3.35 eV and their optimised resistivity, which was significantly influenced by the growth temperature, was measured as 1.97 x 10(-3) omega cm. Further, the electrical characteristics of the WZO films were investigated under different W-doping amounts (1.0-9.0 wt.%) and a constant growth temperature (300 degrees C), and the results indicated that the carrier mobility showed an opposite tendency to the W-doping percentage. In addition, the elemental compositions of the WZO films and pristine ZnO films were comparatively studied in terms of Zn, O, and W contents, via X-ray photoelectron spectroscopy (XPS) analysis.
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