AFM/XPS Analysis of the Growth and Architecture of Oriented Molecular Monolayer by Spin Cast Process and Its Cross-Linking Induced by Hyperthermal Hydrogen

We used atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) to comprehensively study the growth and the cross-linking of dotriacontane (C32H66) nanofilms that were deposited on a silicon wafer by the spin-coating process. It was found that the molecular structure of the nanofilms changed with C32H66 concentration at the given spin speed, of which a monolayer of oriented C32H66 molecules, formed at lower deposition concentrations, was composed of a perpendicular orientation state with the molecular long-chain axis perpendicular to the substrate surface and a parallel orientation state, while the perpendicular state was essentially dominant when the nanofilm was formed at higher deposition concentrations. The shortening of the first perpendicular layer in AFM topography could be attributed to the mixing of both parallel and perpendicular lamellas in the first layer. XPS analysis indicated that the average thickness of the layer almost linearly increased with the C32H66 concentration. The monolayer of C32H66 film could be cross-linked by a hyperthermal hydrogen-induced cross-linking (HHIC) at a few eV via kinetic collision to cleave C-H bonds. The water contact angle measurement of extensive HHIC on C32H66 nanofilms disclosed that the static contact angle decreased with the treatment time (or fluence) and saturated after full cross-linking of the film.

Automated summary

The molecular structure and cross-linking state of C32H66 nanofilms are influenced by the concentration of C32H66, with higher concentrations resulting in a dominant perpendicular orientation state.