4.6 Article

Thermal Conductivity of BAs under Pressure

期刊

ADVANCED ELECTRONIC MATERIALS
卷 8, 期 10, 页码 -

出版社

WILEY
DOI: 10.1002/aelm.202200017

关键词

boron arsenide; thermal conductivity; high pressure; phonon dispersion; phonon scattering selection rules

资金

  1. ULTRA, an Energy Frontier Research Center - U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0021230]
  2. National Science Foundation (NSF) [1847632, 1750786]
  3. Office of Naval Research (ONR) under MURI Award [N00014-16-1-2436]
  4. Directorate For Engineering
  5. Div Of Chem, Bioeng, Env, & Transp Sys [1750786] Funding Source: National Science Foundation

向作者/读者索取更多资源

This study investigates the relationship between thermal conductivity and pressure in boron arsenide (BAs) and finds that the thermal conductivity of BAs is independent of pressure below 30 GPa. This result demonstrates the significant relationship between phonon dispersion properties and phonon scattering rates.
The thermal conductivity of boron arsenide (BAs) is believed to be influenced by phonon scattering selection rules due to its special phonon dispersion. Compression of BAs leads to significant changes in phonon dispersion, which allows for a test of first principles theories for how phonon dispersion affects three- and four-phonon scattering rates. This study reports the thermal conductivity of BAs from 0 to 30 GPa. Thermal conductivity vs. pressure of BAs is measured by time-domain thermoreflectance with a diamond anvil cell. In stark contrast to what is typical for nonmetallic crystals, BAs is observed to have a pressure independent thermal conductivity below 30 GPa. The thermal conductivity of nonmetallic crystals typically increases upon compression. The unusual pressure independence of BAs's thermal conductivity shows the important relationship between phonon dispersion properties and three- and four-phonon scattering rates.

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