期刊
NANOMATERIALS
卷 12, 期 12, 页码 -出版社
MDPI
DOI: 10.3390/nano12122101
关键词
graphene; N/MEMS; displacement sensor; pressure sensor
类别
资金
- 173 Projects of China [2020JCJQZD043, 2021JCJQJJ0172, 2017JCJQZD006]
A novel crossbeam structure with a graphene varistor protected by Si3N4 is proposed for N/MEMS mechanical sensors, which exhibits excellent mechanoelectrical coupling performance and high sensitivity.
A graphene membrane acts as a highly sensitive element in a nano/micro-electro-mechanical system (N/MEMS) due to its unique physical and chemical properties. Here, a novel crossbeam structure with a graphene varistor protected by Si3N4 is presented for N/MEMS mechanical sensors. It substantially overcomes the poor reliability of previous sensors with suspended graphene and exhibits excellent mechanoelectrical coupling performance, as graphene is placed on the root of the crossbeam. By performing basic mechanical electrical measurements, a preferable gauge factor of similar to 1.35 is obtained. The sensitivity of the graphene pressure sensor based on the crossbeam structure chip is 33.13 mV/V/MPa in a wide range of 0 similar to 20 MPa. Other static specifications, including hysteresis error, nonlinear error, and repeatability error, are 2.0119%, 3.3622%, and 4.0271%, respectively. We conclude that a crossbeam structure with a graphene sensing element can be an application for the N/MEMS mechanical sensor.
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