相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Structural, morphological and magnetic properties of iron oxide thin films obtained by atomic layer deposition as a function of their thickness
Paulina Marquez et al.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2021)
Oxygen Vacancy Mediated Stabilization of Cubic Phase at Room Temperature and Resistive Switching Effect in Sm- and Dy-Doped HfO2 Thin Film
Sandeep Kumar et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2020)
The Influence of Ozone: Superstoichiometric Oxygen in Atomic Layer Deposition of Fe2O3 Using tert-Butylferrocene and O3
Joel R. Schneider et al.
ADVANCED MATERIALS INTERFACES (2020)
Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition
Kaupo Kukli et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2020)
Influence of oxygen precursors on atomic layer deposition of HfO2 and hafnium-titanium oxide films: Comparison of O3- and H2O-based processes
Lauri Aarik et al.
APPLIED SURFACE SCIENCE (2020)
Nanoscale resistive switching memory devices: a review
Stefan Slesazeck et al.
NANOTECHNOLOGY (2019)
Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories
D. Maldonado et al.
MICROELECTRONIC ENGINEERING (2019)
Resistive switching and its modulating ferromagnetism and magnetoresistance of a ZnO-Co/SiO2-Co film
Fanfan Du et al.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2019)
Conductive filaments controlled ferromagnetism in Co-doped ZnO resistive switching memory device
Sih-Sian Li et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Oxygen vacancy chain and conductive filament formation in hafnia
Kan-Hao Xue et al.
JOURNAL OF APPLIED PHYSICS (2018)
Resistive switching and ferromagnetism modulation in copper oxide film on Nb:SrTiO3 substrate
Jihao Xie et al.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2018)
Atomic layer deposition and properties of ZrO2/Fe2O3 thin films
Kristjan Kalam et al.
BEILSTEIN JOURNAL OF NANOTECHNOLOGY (2018)
Electric and Magnetic Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films
Kristjan Kalam et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2018)
Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates
Kaupo Kukli et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2018)
Interfacial interactions and their impact on redox-based resistive switching memories (ReRAMs)
Ilia Valov
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)
Filamentary Model in Resistive Switching Materials
Alladin C. Jasmin
ADVANCED MATERIALS FOR SUSTAINABILITY AND GROWTH (2017)
HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
Boubacar Traore et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature
Shaoqing Ren et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2016)
A review of emerging non-volatile memory (NVM) technologies and applications
An Chen
SOLID-STATE ELECTRONICS (2016)
Effect of substrate-enhanced and inhibited growth on atomic layer deposition and properties of aluminum-titanium oxide films
Tonis Arroval et al.
THIN SOLID FILMS (2016)
Oxygen vacancy effects in HfO2 - based resistive switching memory: First principle study
Yuehua Dai et al.
AIP ADVANCES (2016)
State of the art of metal oxide memristor devices
Baker Mohammad et al.
NANOTECHNOLOGY REVIEWS (2016)
Synthesis and characterization of mesoporous α-Fe2O3 nanoparticles and investigation of electrical properties of fabricated thick films
Ali Mirzaei et al.
PROCESSING AND APPLICATION OF CERAMICS (2016)
Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications
O. E. Tereshchenko et al.
APPLIED PHYSICS LETTERS (2015)
The electrical conductivity of thin film donor doped hematite: from insulator to semiconductor by defect modulation
J. Engel et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2014)
Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
Ilia Valov
CHEMELECTROCHEM (2014)
Unexpected magnetism in nanomaterials
Ranber Singh
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2013)
Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in VO2
A. Zimmers et al.
PHYSICAL REVIEW LETTERS (2013)
Redox-Based Resistive Switching Memories
Rainer Waser
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2012)
Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material
T. Bertaud et al.
THIN SOLID FILMS (2012)
Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
Stephan Menzel et al.
ADVANCED FUNCTIONAL MATERIALS (2011)
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
D. Ielmini et al.
JOURNAL OF APPLIED PHYSICS (2011)
Electrode dependence of filament formation in HfO2 resistive-switching memory
Kuan-Liang Lin et al.
JOURNAL OF APPLIED PHYSICS (2011)
Metal oxide resistive memory switching mechanism based on conductive filament properties
G. Bersuker et al.
JOURNAL OF APPLIED PHYSICS (2011)
Thermochemical resistive switching: materials, mechanisms, and scaling projections
Daniele Ielmini et al.
PHASE TRANSITIONS (2011)
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
L. Goux et al.
APPLIED PHYSICS LETTERS (2010)
On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO2\Pt Memory Systems
L. Goux et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2010)
Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
H. Y. Lee et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications
Ch. Walczyk et al.
JOURNAL OF APPLIED PHYSICS (2009)
Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
S. H. Chang et al.
PHYSICAL REVIEW LETTERS (2009)
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
I. H. Inoue et al.
PHYSICAL REVIEW B (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Batch ALD: Characteristics, comparison with single wafer ALD, and examples
Ernst Granneman et al.
SURFACE & COATINGS TECHNOLOGY (2007)
Absence of magnetism in hafnium oxide films
DW Abraham et al.
APPLIED PHYSICS LETTERS (2005)
First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
XY Zhao et al.
PHYSICAL REVIEW B (2002)
Spintronics:: A spin-based electronics vision for the future
SA Wolf et al.
SCIENCE (2001)
Thermal behavior of the amorphous precursors of the HfO2-Fe2O3 system
G Stefanic et al.
THERMOCHIMICA ACTA (2001)
分享论文
