4.7 Article

Electrically Tunable Solution-Processed Transparent Conductive Thin Films Based on Colloidally Dispersed ITO@Ag Composite Ink

期刊

NANOMATERIALS
卷 12, 期 12, 页码 -

出版社

MDPI
DOI: 10.3390/nano12122060

关键词

transparent conductive oxides; silver; Sn-doped In2O3; colloid; spin coating

资金

  1. National Research Foundation of Korea (NRF) - Korea government (MSIT) [2022R1F1A1074625]
  2. Incheon National University
  3. National Research Foundation of Korea [2022R1F1A1074625] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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A colloidal Sn-doped In2O3 (ITO) ink with silver (Ag) introduced was prepared for transparent conductive electrodes. By controlling the weight ratio of ITO and Ag nanoparticles, the ITO@Ag colloid ink was fabricated, showing a flattened and smooth surface due to the metallic silver filling the gap between the nano-particles. The inclusion of silver significantly reduced the resistivity and the films exhibited good optical transparency.
Silver (Ag) introduced colloidal Sn-doped In2O3 (ITO) ink for transparent conductive electrodes (TCEs) was prepared to overcome the limitation of colloidally prepared thin film; low density thin film, high resistance. ITO@Ag colloid ink was made by controlling the weight ratio of ITO and Ag nanoparticles through ball-milling and fabricated using spin coating. These films were dried at 220 degrees C and heat-treated at 450-750 degrees C in an air atmosphere to pyrolyze the organic ligand attached to the nanoparticles. All thin films showed high crystallinity. As the thermal treatment temperature increased, films showed a cracked surface, but as the weight percentage of silver increased, a flattened and smooth surface appeared, caused by the metallic silver filling the gap between the nano-particles. This worked as a bridge to allow electrical conduction, which decreases the resistivity over an order of magnitude, from 309 to 0.396, and 0.107 omega center dot cm for the ITO-220 degrees C, ITO-750 degrees C, and ITO@Ag (7.5 wt.%)-750 degrees C, respectively. These films also exhibited >90% optical transparency. Lowered resistivity is caused due to the inclusion of silver, providing a sufficient number of charge carriers. Furthermore, the work function difference between ITO and silver builds an ohmic junction, allowing fluent electrical flow without any barrier.

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