Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

Molybdenum disulfide (MoS2) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS2-based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-kappa gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS2 and high-kappa gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-kappa materials as gate dielectrics. We first briefly discuss the research background of MoS2 FETs. Second, we expound the electrical and other essential properties of high-kappa gate dielectrics, which are essential to the performance of MoS2 FETs. Finally, we focus on the advances in fabricating MoS2 FETs with ALD high-kappa gate dielectrics on MoS2, as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.

Automated summary

This review summarizes recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-kappa materials as gate dielectrics. The electrical and other essential properties of high-kappa gate dielectrics, as well as the development prospects in this field, are also discussed.