期刊
ADVANCED MATERIALS INTERFACES
卷 9, 期 23, 页码 -出版社
WILEY
DOI: 10.1002/admi.202200453
关键词
atomic diffusion; ionic redistribution; metal; metal oxide interface; MoO; (3); oxygen vacancy; Raman spectroscopy
资金
- Institute for Basic Science in Korea [IBS-R009-G2]
- INFN Group Vth
- Universita degli Studi di Camerino within the CRUI-CARE Agreement
This study systematically investigates the phase evolution and ionic redistribution in amorphous MoO3 films on metallic Al and Cu substrates after distinct thermal treatments. The results show that the metallic interface significantly modifies the structure and formation of oxygen vacancies in the MoO3 films, and the oxygen vacancy density can be tuned by the choice of metal and treatment parameters.
The phase evolution and ionic redistribution in amorphous MoO3 films, deposited on metallic aluminium (Al) and copper (Cu) substrates and subjected to distinct thermal treatments, are systematically investigated in this work. It is shown that the metallic interface significantly modifies the formation and dynamics of oxygen vacancies within the resulted structure, reducing the oxygen content of the MoO3 up to x < 2.94. The concentration of the oxygen vacancies can also be extended to the bulk via thermal treatment up to 400 degrees C. It is demonstrated that the MoO3 structure on metallic substrates is affected either by the diffusion of the metallic atoms inserted from the interface, which results in a formation of the meta-stable alloy phases in case of Cu, or by the introduction of the oxygen vacancies into the crystalline matrix in case of Al. The oxygen vacancy density in the MoO3 films with a metallic interface can be tuned via optimal choice of the metal and treatment parameters such as temperature and oxygen partial pressure. Furthermore, the intrinsic defects present in the amorphous structure enhance the ionic mobility and diffusion of the metallic ions inside the crystalline structure.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据