Detection of Single W-Centers in Silicon

ABSTRACT: Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge toward large-scale advanced quantum photonic devices. Research efforts have so far focused on extrinsic defects based on impurities incorporated inside the silicon lattice. Here, we demonstrate the detection of single intrinsic defects in silicon, which are linked to a tri-interstitial complex called the W-center, with a zero-phonon line at 1.218 mu m. Investigating their single-photon emission properties reveals new information about this common radiation damage center, such as its dipolar orientation and its photophysics. We also identify its microscopic structure and show that, although this defect does not feature electronic states in the bandgap, Coulomb interactions lead to excitonic radiative recombination below the silicon bandgap. These results could set the stage for numerous quantum perspectives based on intrinsic luminescent defects in silicon, such as integrated quantum photonics and quantum communications.

Automated summary

This study demonstrates the detection of single intrinsic defects in silicon and reveals new information about their radiation damage center properties. The microscopic structure and radiative recombination mechanism of these defects below the silicon bandgap are identified. These results are of great significance for conducting quantum research based on intrinsic luminescent defects in silicon.