相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Switchable Photoresponse Mechanisms Implemented in Single van der Waals Semiconductor/Metal Heterostructure
Mingde Du et al.
ACS NANO (2022)
Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors
Xinzuo Sun et al.
ACS NANO (2021)
An Ultrafast WSe2 Photodiode Based on a Lateral p-i-n Homojunction
Youwei Zhang et al.
ACS NANO (2021)
Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
Xiankun Zhang et al.
NATURE COMMUNICATIONS (2021)
The development of integrated circuits based on two-dimensional materials
Kaichen Zhu et al.
NATURE ELECTRONICS (2021)
Analogue two-dimensional semiconductor electronics
Dmitry K. Polyushkin et al.
NATURE ELECTRONICS (2020)
Impact of Al2O3 Passivation on the Photovoltaic Performance of Vertical WSe2 Schottky Junction Solar Cells
Elaine McVay et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit
Seunguk Song et al.
NATURE ELECTRONICS (2020)
van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe
Tao Shen et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2019)
Femtofarad optoelectronic integration demonstrating energy-saving signal conversion and nonlinear functions
Kengo Nozaki et al.
NATURE PHOTONICS (2019)
Nb2SiTe4: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response
Mingxing Zhao et al.
ACS NANO (2019)
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction
Ki Seok Kim et al.
NATURE COMMUNICATIONS (2019)
Epitaxial Growth of Two-Dimensional Metal-Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (VSe2/MX2) and Their Band Alignments
Zhepeng Zhang et al.
ACS NANO (2019)
van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling-Bond-Free WSe2 and WS2
Ruixia Wu et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
A dielectric-defined lateral heterojunction in a monolayer semiconductor
M. Iqbal Bakti Utama et al.
NATURE ELECTRONICS (2019)
Simultaneous synthesis and integration of two-dimensional electronic components
Qi Zhang et al.
NATURE ELECTRONICS (2019)
van der Waals Metallic Transition Metal Dichalcogenides
Gang Hee Han et al.
CHEMICAL REVIEWS (2018)
Contact engineering for 2D materials and devices
Daniel S. Schulman et al.
CHEMICAL SOCIETY REVIEWS (2018)
Synthesis of Ultrathin Metallic MTe2 (M = V, Nb, Ta) Single-Crystalline Nanoplates
Jia Li et al.
ADVANCED MATERIALS (2018)
Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
Wei Sun Leong et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2018)
Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature
James Bullock et al.
NATURE PHOTONICS (2018)
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Denis A. Bandurin et al.
NATURE NANOTECHNOLOGY (2017)
Direct observation of the layer-dependent electronic structure in phosphorene
Likai Li et al.
NATURE NANOTECHNOLOGY (2017)
Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures
Chenxi Zhang et al.
2D MATERIALS (2017)
Field Effect in Graphene-Based van der Waals Heterostructures: Stacking Sequence Matters
Daniele Stradi et al.
NANO LETTERS (2017)
Poly(4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS2 homojunction photodiode
Xiankun Zhang et al.
NATURE COMMUNICATIONS (2017)
Coulomb engineering of the bandgap and excitons in two-dimensional materials
Archana Raja et al.
NATURE COMMUNICATIONS (2017)
Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions
Tiefeng Yang et al.
NATURE COMMUNICATIONS (2017)
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
Changsik Kim et al.
ACS NANO (2017)
Multimodal Photodiode and Phototransistor Device Based on Two-Dimensional Materials
Seon Namgung et al.
ACS NANO (2016)
Multiscale Analysis for Field-Effect Penetration through Two-Dimensional Materials
Tian Tian et al.
NANO LETTERS (2016)
Optical modulators with 2D layered materials
Zhipei Sun et al.
NATURE PHOTONICS (2016)
2D materials and van der Waals heterostructures
K. S. Novoselov et al.
SCIENCE (2016)
Visualizing band offsets and edge states in bilayer-monolayer transition metal dichalcogenides lateral heterojunction
Chendong Zhang et al.
NATURE COMMUNICATIONS (2016)
Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier
Kengo Nozaki et al.
OPTICA (2016)
Van der Waals heterostructures and devices
Yuan Liu et al.
NATURE REVIEWS MATERIALS (2016)
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
Yuanyue Liu et al.
SCIENCE ADVANCES (2016)
Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy
Xufan Li et al.
SCIENCE ADVANCES (2016)
Photocurrent generation with two-dimensional van der Waals semiconductors
Michele Buscema et al.
CHEMICAL SOCIETY REVIEWS (2015)
Light-emitting diodes by band-structure engineering in van der Waals heterostructures
F. Withers et al.
NATURE MATERIALS (2015)
Ultrafast response of monolayer molybdenum disulfide photodetectors
Haining Wang et al.
NATURE COMMUNICATIONS (2015)
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
Marco M. Furchi et al.
NANO LETTERS (2014)
Atomically thin p-n junctions with van der Waals heterointerfaces
Chul-Ho Lee et al.
NATURE NANOTECHNOLOGY (2014)
Formation of a Stable p-n Junction in a Liquid-Gated MoS2 Ambipolar Transistor
Y. J. Zhang et al.
NANO LETTERS (2013)
Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
Woo Jong Yu et al.
NATURE NANOTECHNOLOGY (2013)
Improved Black Silicon for Photovoltaic Applications
Michael Algasinger et al.
ADVANCED ENERGY MATERIALS (2013)
Atomically Thin MoS2: A New Direct-Gap Semiconductor
Kin Fai Mak et al.
PHYSICAL REVIEW LETTERS (2010)