4.6 Article

Optimizing Broadband Near-Infrared Emission in Bi/Sn-Doped Aluminosilicate Glass by Modulating Glass Composition

期刊

MICROMACHINES
卷 13, 期 6, 页码 -

出版社

MDPI
DOI: 10.3390/mi13060921

关键词

bismuth; tin; near-infrared; silicate; glass; aluminum

资金

  1. National Natural Science Foundation of China [11804281]
  2. Nanchong Science and Technology Project [21GXJS0014]

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The Bi/Sn-doped aluminosilicate glass samples were prepared by a melting-quenching method, and their near-infrared (NIR) emission properties were investigated. It was found that all samples exhibited an ultra-broadband NIR emission ranging from 950 nm to 1600 nm under 480 nm excitation, covering the entire low-loss window of fiber. The NIR emission spectrum showed a maximum emission peak at around 1206 nm with a full width at half maximum (FWHM) of approximately 220 nm. Additionally, the NIR emission intensity strongly depended on the composition of the glass, which could be optimized by adjusting the glass composition. The study proposed that Bi/Sn-doped aluminosilicate glass has great potential to be a new type of core fiber material and applied in optical fiber amplifiers (OFAs) due to its excellent performance in ultra-broadband NIR emission.
The Bi/Sn-doped aluminosilicate glass samples were prepared using a melting-quenching method and their near-infrared (NIR) emission properties were studied. An ultra-broadband NIR emission ranging from 950 nm to 1600 nm was observed in all samples under 480 nm excitation, which covered the whole fiber low-loss window. The NIR emission spectrum showed that the maximum emission peak was about 1206 nm and the full width at half maximum (FWHM) was about 220 nm. Furthermore, the NIR emission intensity strongly depends on the composition of the glass, which can be optimized by modulating the glass composition. The Bi-0 and Bi+ ions were the NIR luminescence source of the glass samples in this paper. The Bi/Sn-doped aluminosilicate glass has the potential to become a new type of core fiber material and to be applied to optical fiber amplifiers (OFAs), based on its excellent performance in ultra-broadband NIR emission.

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