期刊
LIGHT-SCIENCE & APPLICATIONS
卷 11, 期 1, 页码 -出版社
SPRINGERNATURE
DOI: 10.1038/s41377-022-00936-z
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资金
- National Key R&D Program of China [2017YFA0204701]
- Fundamental Research Funds for the Central Universities
- Jiangsu Innovation Team Program
In this study, high-performance n-type semiconductor nanosheets were fabricated and air-stable field-effect transistors, phototransistors, with wide spectral response were developed.
An organic semiconductor with high carrier mobility and efficient light absorption over a wide spectral range is of the most important yet challenging material for constructing a broadband responsive organic photodetector. However, the development of such organic semiconductors, especially for air-stable n-type organic small molecule semiconductors, is still at an early stage. Here we report the fabrication of high-performance n-type semiconducting crystalline nanosheets and the development of air-stable field-effect transistors, phototransistors, with high response over a broad spectrum. The n-type small molecule semiconductor is assembled into a crystalline nanosheet based on the solvent-phase interfacial self-assembly method. N-type field-effect transistors with high electron mobility are fabricated and their electrical performances exhibit excellent air stability. Impressively, the demonstrated phototransistors exhibit an ultrahigh responsivity over a wide spectral range from 365 to 940 nm, with a maximum photoresponsivity of 9.2 x 10(5) A W(-1)( )and specific detectivity of 5.26 x 10(13) Jones, which is the best performance among the reported n-type organic small molecule-based phototransistors.
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