期刊
ADVANCED OPTICAL MATERIALS
卷 10, 期 17, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.202102711
关键词
dilute magnetic semiconductors; doping; photoluminescence; transition metal dichalcogenides; tungsten diselenide; vanadium dopants
资金
- Deutsche Forschungsgemeinschaft (DFG) [EXC-2111-390814868, SPP-2244, KA 5418/1-1, HO 3324/13-1, BU 1125/12-1]
- Institute for Basic Science [IBS-R011-D1]
- JSPS KAKENHI [19H05790, 20H00354, 21H05233]
- Projekt DEAL
This study investigates semiconducting WSe2 monolayers doped with vanadium atoms, which exhibits p-type doping characteristics and impurity-related emission. Measurements on V-doped WSe2 devices show bipolar carrier tunability. The doped monolayers display magnetic hysteresis in transport measurements and a nonlinear g-factor for excitons without magnetic hysteresis. This work provides crucial insights regarding magnetic properties of doped 2D materials.
The ability to dope transition metal dichalcogenides such as tungsten diselenide (WSe2) with magnetic transition metal atoms in a controlled manner has motivated intense research with the aim of generating dilute magnetic semiconductors. In this work, semiconducting WSe2 monolayers, substitutionally doped with vanadium atoms, are investigated using low-temperature luminescence and optoelectronic spectroscopy. V-dopants lead to a p-type doping character and an impurity-related emission approximate to 160 meV below the neutral exciton, both of which scale with the nominal percentage of V-dopants. Measurements using field-effect devices of 0.3% V-doped WSe2 demonstrate bipolar carrier tunability. The doped monolayers display a clear magnetic hysteresis in transport measurements both under illumination and without illumination, whereas the valley polarization of the excitons reveals a nonlinear g-factor without a magnetic hysteresis within the experimental uncertainty. Hence, this work on V-doped WSe2 provides crucial insights concerning suitable characterization methods on magnetic properties of doped 2D materials.
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