Design and Analysis of Si1-x-yGeySnx-Si1-xGex Alloy Based Solar Cell Emphasizing on Ge Composition 15%

The application of group IV materials in optoelectronic, electronic and photonic devices is one of the active research fields for Si Photonics. In this paper, we present the design and implementation of direct bandgap Si1 - x-yGeySnx-Si1 - xGex alloy based solar cell emphasizing on thickness reduction and conversion efficiency improvement with Ge composition of 15% and obtained the performance parameters of the structure, including short circuit current density, open circuit voltage, efficiency, fill factors etc. by using ATLAS TCAD simulator. The estimated values and its performance of the proposed structure is compared with the theoretical values of already reported Si1 - xGex based solar cells in the literature. Hence, comparatively better results are obtained. The high efficiency, smaller value of substrate thickness and 15% Ge composition makes the proposed structure attractive for various applications in solar cell industry.

Automated summary

This paper presents the design and implementation of a solar cell based on Si1-x-yGeySnx-Si1-xGex alloy, focusing on thickness reduction and conversion efficiency improvement. The structure shows better performance compared to previously reported Si1-xGex based solar cells, with high efficiency, smaller substrate thickness, and a 15% Ge composition. It is attractive for various applications in the solar cell industry.