L 21 ordering of Co2FeSn thin films promoted by high-temperature annealing

We report the effect of annealing on the crystalline ordering and physical properties in thin films of a nodal line semimetal candidate L2(1)-type Co2FeSn. The Co-Fe-Sn films with a composition of Co:Fe:Sn similar to 2:1:1 were deposited on MgO(001) substrates at a substrate temperature of 150 degrees C by radio-frequency magnetron sputtering. The as-deposited film showed x-ray diffraction patterns corresponding to the B2 ordering. Annealing at 600 and 700 degrees C after the deposition resulted in the appearance of the (111) diffraction peak, which is characteristic of the L2(1) ordering. Although anomalous Hall conductivity and transverse thermoelectric conductivity decreased from those of the as-deposited film with the annealing-induced L2(1) ordering, the low anomalous Hall conductivity of the 700 degrees C-annealed film was consistent with the theoretically estimated low value. These results show the significant influence of crystalline ordering on the electrical and thermoelectric transport properties. The annealing process is beneficial for studying the exotic physics arising from topological band features in the L2(1)-ordered Co2FeSn thin films. (C) 2022 Author(s).

Automated summary

The effect of annealing on the crystalline ordering and physical properties in thin films of Co2FeSn is reported. The annealing process induced structural changes and significantly influenced the electrical and thermoelectric transport properties. These findings highlight the importance of annealing in studying the topological band features in Co2FeSn thin films.