Tailoring magnetism in silicon-doped zigzag graphene edges

Recently, the edges of single-layer graphene have been experimentally doped with silicon atoms by means of scanning transmission electron microscopy. In this work, density functional theory is applied to model and characterize a wide range of experimentally inspired silicon doped zigzag-type graphene edges. The thermodynamic stability is assessed and the electronic and magnetic properties of the most relevant edge configurations are unveiled. Importantly, we show that silicon doping of graphene edges can induce a reversion of the spin orientation on the adjacent carbon atoms, leading to novel magnetic properties with possible applications in the field of spintronics.

Automated summary

Recently, silicon atoms have been successfully doped into the edges of single-layer graphene through scanning transmission electron microscopy. In this study, density functional theory is used to model and characterize silicon-doped zigzag-type graphene edges inspired by experiments. The thermodynamic stability is evaluated, and the electronic and magnetic properties of the most relevant edge configurations are revealed. Importantly, it is shown that silicon doping of graphene edges can reverse the spin orientation on adjacent carbon atoms, leading to novel magnetic properties with potential applications in spintronics.