Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

At room temperature, a 10 mu m cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 mu m cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current-voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.

Automated summary

A 10 mu m cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array has been reported. The heterostructure on GaSb-on-GaAs was found to be epitaxial, single-crystalline but with reduced material homogeneity, extended lattice defects, and atomic segregation/intermixing compared to that on the GaSb substrate. The strain-induced degradation of material quality was observed by temperature-dependent current-voltage measurements. The T2SL with the IMF array shows potential as an effective route to mitigate the impact of lattice mismatch, allowing for low-cost, scalable manufacturing of focal plane arrays (FPA) for various applications.