Influence of the Electron Beam and the Choice of Heating Membrane on the Evolution of Si Nanowires' Morphology in In Situ TEM

We used in situ transmission electron microscopy (TEM) to observe the dynamic changes of Si nanowires under electron beam irradiation. We found evidence of structural evolutions under TEM observation due to a combination of electron beam and thermal effects. Two types of heating holders were used: a carbon membrane, and a silicon nitride membrane. Different evolution of Si nanowires on these membranes was observed. Regarding the heating of Si nanowires on a C membrane at 800 degrees C and above, a serious degradation dependent on the diameter of the Si nanowire was observed under the electron beam, with the formation of Si carbide. When the membrane was changed to Si nitride, a reversible sectioning and welding of the Si nanowire was observed.

Automated summary

In this study, we used in situ transmission electron microscopy to observe the dynamic changes of Si nanowires under electron beam irradiation. Evidence of structural evolutions due to a combination of electron beam and thermal effects was found. Different evolution of Si nanowires was observed on carbon and silicon nitride membranes. The Si nanowires on the carbon membrane exhibited serious degradation and formation of Si carbide at temperatures above 800 degrees C, while reversible sectioning and welding of the Si nanowire was observed on the silicon nitride membrane.