期刊
MATERIALS
卷 15, 期 15, 页码 -出版社
MDPI
DOI: 10.3390/ma15155098
关键词
semiconductors; InP; Raman spectroscopy; indentation
类别
资金
- National Science Centre, Poland [2016/21/B/ST8/02737]
Nanoindentation and Raman spectroscopy measurements on the (001) surface of undoped and S-doped InP crystal reveal a plastic deformation mechanism governed by dislocations activity, with a reduction in elastic energy stored in the plastic zone.
Nanoindentations and the Raman spectroscopy measurements were carried out on the (001) surface of undoped and S-doped InP crystal. The samples were indented with the maximum load ranging from 15 mN to 100 mN. The phase transition B3 -> B1 was not confirmed by spectroscopic experiments, indicating a plastic deformation mechanism governed by dislocations activity. Increasing the maximum indentation load shifts and the longitudinal and transverse optical Raman bands to lower frequencies reveals a reduction in the elastic energy stored in the plastic zone right below the indentation imprint. Mechanical experiments have shown that a shift in Raman bands occurs alongside the indentation size effect. Indeed, the hardness of undoped and S-doped InP crystal decreases as a function of the maximum indentation load.
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