CuAlO2/AlN double-layer thin film prepared by the spin coating approach

Delafossite CuAlO2/AlN thin films have been prepared by a facile and affordable spin coating method. The main purposes of this experiment were to explore the preparation of CuO on AlN film by a spin coating method and to form CuAlO2 by high-temperature annealing and also to explore the properties resulting from different temperature treatments. The CuAlO2/AlN film was identified by X-ray diffraction studies, and field emission scanning electron microscopy studies. The cross-section of the CuAlO2/AlN film and thickness of the CuAlO2 and AlN film were 346 nm and 625 nm, respectively. Because, AlN has various excellent characteristics, such as a good dielectric constant, low energy consumption, and acoustic wave components, it has considerable potential in various applications, such as bulk acoustic wave filters, surface acoustic wave filters, and semiconductors. This experiment demonstrates that CuAlO2/AlN film can be prepared by a simple and inexpensive spin coating method.

Automated summary

In this study, Delafossite CuAlO2/AlN thin films were prepared using a spin coating method. The aim was to explore the preparation of CuO on AlN film and form CuAlO2 through high-temperature annealing, as well as investigate the properties resulting from different temperature treatments. The results showed that CuAlO2/AlN film can be easily and affordably prepared using spin coating, and AlN has excellent characteristics that make it suitable for various applications.