4.0 Article

A Three-Terminal n plus -p-n plus Silicon CMOS Light-Emitting Device for the New Fully Integrated Optical-Type Fingerprint Recognition System

期刊

JOURNAL OF DISPLAY TECHNOLOGY
卷 12, 期 1, 页码 77-81

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2015.2456641

关键词

biometrics; carrier injection; CMOS light-emitting device (LED); E-field confinement; fingerprint recognition system; photodiode; wedge shape

资金

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [NRF-2015R1C1A1A02036348]

向作者/读者索取更多资源

A new fully integrated CMOS optical-type fingerprint recognition system with silicon light-emitting devices (LEDs) and photodiodes is proposed. A three-terminal n+-p-n+ silicon CMOS LED is designed and implemented as a key block to replace the bulky optical light source and to realize a slim and integrated fingerprint sensor. The proposed LED employs injection-enhanced silicon in an avalanche mode, where E-field confinement with a wedge shape at a reverse biased p-n+ junction and hot-carrier injection from the adjacent forward biased p-n+ junction are applied to increase the quantum conversion efficiency of the LED. The developed LED was fabricated in a 0.18 mu m CMOS process. It emits 1.27 nW at a 600 nm wavelength consuming 2 mA at a 0.5 V reverse biased voltage and 2 V forward biased voltage. It provides an electrical-to-optical power conversion efficiency of 1.27 x 10(-6).

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.0
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据