期刊
JOURNAL OF DISPLAY TECHNOLOGY
卷 12, 期 3, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JDT.2015.2445378
关键词
Contact resistance; indium-tin-oxide; thin-film transistors (TFTs); zinc oxide (ZnO)
资金
- Deutsche Forschungsgemeinschaft (DFG) [1161/2]
- European Commission [GA 263042, 644631]
We report for the first time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-film transistors (TFTs) in this Ag/ITO contact configuration show improved saturation mobility of 0.53 cm(2) . V-1 . s(-1) with respect to 0.08 cm(2) . V-1 . s(-1) without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.
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