期刊
SOLID-STATE ELECTRONICS
卷 194, 期 -, 页码 -出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2022.108384
关键词
Density of states; Device physics; Organic transistors; Solvent vapor annealing
资金
- National Natural Science Foundation of China [61804078, 61974070, 52105369]
- Natural Science Foundation of Jiangsu Province [BK20180759, BK20200746]
- Natural Science Foundation of the Jiangsu Higher Education Institutions of China [20KJB460008]
- Nanjing University of Posts and Telecommunications [NY218149, NY219003, NY220066, NY220114, NY220077]
This study found that using MEK solvent vapor annealing in pentacene organic field-effect transistors can significantly improve device performance and interpret such improvement through reshaping the density of states.
Solvent vapor annealing (SVA) is a post-fabrication process commonly utilized to reduce the structural or energetic disorder of organic semiconductor. In this work, pentacene organic field-effect transistors were treated by different solvent vapors. Methyl ethyl ketone (MEK) vapor was found to substantially improve device performance. The threshold voltage was lowered to be just -0.2 V and the subthreshold swing was steep at 200 mV/ dec. Such improvements were interpreted in terms of the density of states. Quantitative analyses indicated that the SVA with MEK reshaped the density of states of the pentacene film; in particular, the localized tail states decreased considerably. Our finding suggests that our SVA method can repair water-induced defects in grain boundaries, which commonly has a negative effect on carrier transport, i.e., lessening charge localization in deep traps and thus ameliorating charge transport in electron devices. Therefore, polymer-enhanced SVA is a powerful post-fabrication technique to manufacturing high-performance organic devices.
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