A multi-energy level agnostic approach for defect generation during TDDB stress

A multi-energy level agnostic model is used to examine defect generation during time-dependent dielectric breakdown stress. When considering distributed bond strengths, Monte Carlo simulations show that the distinctive power-law increase of the generated defects with stress time is attained. The rate is strongly influenced by the width of the distribution. The time to breakdown in DC and AC unipolar simulations is proportional to the fluence and energy of the injected carriers. These findings are in line with thin oxide breakdown measurements, which demonstrate a fluence and energy-driven process.

Automated summary

A multi-energy level agnostic model and Monte Carlo simulations were used to investigate defect generation during time-dependent dielectric breakdown stress. The results showed that the growth rate of generated defects was strongly influenced by the width of the distribution of bond strengths. The breakdown time in DC and AC unipolar simulations was found to be proportional to the fluence and energy of the injected carriers.