4.8 Article

Transient Dynamics of Charges and Excitons in Quantum Dot Light-Emitting Diodes

期刊

SMALL
卷 18, 期 29, 页码 -

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202202290

关键词

charge injection; light-emitting diodes; mobility; quantum dots; transient electroluminescence

资金

  1. Industrial Strategic Technology Development Program [10077471]
  2. Technology Innovation Program - Ministry of Trade, Industry & Energy (MOTIE, Korea) [20010737, 20016332]
  3. National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2020R1F1A1074263, 2018R1A6A1A03025242]
  4. Kwangwoon University
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [20016332] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This study analyzes the transient electroluminescence signals of dichromatic QLEDs and provides insights into the operation mechanisms such as charge injection, exciton recombination, and electron mobility. Additionally, it quantitatively measures the effects of Förster resonant energy transfer and exciton quenching in QLED operation.
Wide interest in quantum dot (QD) light-emitting diodes (QLEDs) for potential application to display devices and light sources has led to their rapid advancement in device performance. Despite such progress, detailed operation mechanisms of QLEDs, which are necessary for the fundamental understanding and further improvements, have been still uncertain because of the intricate interaction between charges and excitons in electrical operation. In this work, the transient electroluminescence (TREL) signals of dichromatic QLEDs which are purposely designed to consist of two different color-emitting QD layers are analyzed. As a result, not only can the charge injection and exciton recombination processes be visualized but the electron mobility of the QD layer can also be estimated. Furthermore, the effects of Forster resonant energy transfer between two QDs and exciton quenching near the QD layer are quantitatively measured in QLED operation. The authors believe that their results based on TREL analyses will contribute to the understanding and development of high-performance QLEDs.

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