期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 37, 期 8, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/1361-6641/ac7819
关键词
AlGaN; GaN; GaN; high electron mobility transistor (HEMT); SiC; kink effect
类别
资金
- Ministry of Science and Technology (MOST), Taiwan [MOST-109-2112-M-110-015-MY3, MOST-110-2221-E-012-003-MY3]
This study thoroughly analyzes the mechanism of the kink effect observed during the switching operation in AlGaN/GaN high-electron-mobility transistors. The results show that the kink effect leads to a drop in I (D) and a positive shift in V (T). Simulating the trap position reveals that the negative buffer trap is the main cause of the positive shift. Additionally, the I (D)-V (G) characteristics after the kink-effect stress respond differently to different light illuminations, with only UV light being able to restore the V (T) shift caused by the kink effect.
In this study, the mechanism of the kink effect observed during the switching operation in AlGaN/GaN high-electron-mobility transistors is thoroughly analyzed. The I (D)-V (G) characteristics show a drop in I (D) and a positive shift in threshold voltage (V (T)) when the kink effect occurs. Then, using Silvaco software to simulate the trap position, the negative buffer trap induces the V (T) to shift positively, dominating the decrease in the I (D). By using a long-term DC stress test under bias conditions, where the kink phenomenon occurred, the V (T) will shift in the negative direction, which shows that the hole generated by impact ionization (II) plays a key role in the kink effect. Furthermore, the I (D)-V (G) after kink-effect stress does not respond to red, green or blue light illumination but does to UV light, which means that electron de-trapping cannot restore the V (T) shift caused by the kink effect. Finally, the complete mechanism of the kink effect is provided. The recombination of hot holes generated by II with the electron trapped in buffer defects is the main mechanism for the kink phenomenon.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据