期刊
ADVANCED FUNCTIONAL MATERIALS
卷 26, 期 5, 页码 753-759出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.201504036
关键词
electric field effect; interfaces; orbital switches
类别
资金
- National Natural Science Foundation of China [51322101, 51202125, 51231004, 51571128]
- National High Technology Research and Development Program of China [2014AA032901]
The semiconductor industry has seen a remarkable miniaturization trend, where the size of microelectronic circuit components is expected to reach the scale of atom even subatom. Here, an orbital switch formed at the interface between BaTiO3 (BTO) and La0.5Sr0.5MnO3 (LSMO) is used to manipulate the electric field effect in the LSMO/BTO heterostructure. The orbital switch is based on the connection or breakdown of interfacial Ti-O-Mn bond due to the ferroelectric displacement under external electric field. This finding would pave the way for the tuning of the material performance or device operation at atomic level and introducing the orbital degree of freedom into the terrain of microelectronics.
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