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III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis

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PROGRESS IN QUANTUM ELECTRONICS
卷 85, 期 -, 页码 -

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.pquantelec.2022.100401

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资金

  1. US Army Research Office
  2. National Science Foundation
  3. Keck Foundation
  4. Natural Sciences and Engineering Research Council of Canada
  5. College of Engineering at the University of Michigan
  6. McGill University
  7. Emissions Reduction Alberta
  8. Canada Foundation for Innovation

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This review article discusses the molecular beam epitaxy and properties of III-nitride nanostructures, and their applications in photonics, optoelectronics, and artificial photosynthesis. These applications are relevant for next-generation mobile displays, virtual/augmented reality, quantum communication, and sustainability in energy, water, and the environment.
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic, optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including nanowires, monolayer heterostructures, and quantum dots. Their emerging applications in ultraviolet, visible and infrared photonics, quantum optoelectronics, and artificial photosynthesis that are relevant for next generation mobile display, virtual/ augmented reality, quantum communication, and energy, water, and environment sustainability challenges are presented.

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