4.8 Article

Dynamical Anyon Generation in Kitaev Honeycomb Non-Abelian Spin Liquids

期刊

PHYSICAL REVIEW LETTERS
卷 129, 期 3, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.129.037201

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资金

  1. U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Science Center
  2. Office of Naval Research [N00014-20-1-2308]
  3. Army Research Office [W911NF-17-10323]
  4. Caltech Institute for Quantum Information and Matter, an NSF Physics Frontiers Center
  5. Gordon and Betty Moore Foundation [GBMF1250]
  6. Walter Burke Institute for Theoretical Physics at Caltech

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In this paper, we introduce a dynamic anyon-generation protocol that utilizes the universal edge physics to deposit non-Abelian anyons into holes in the spin liquid of Kitaev materials. The required bridge manipulations can be implemented by integrating the Kitaev material into magnetic tunnel junction arrays. This protocol reveals a path to topological qubit experiments in Kitaev materials at zero applied magnetic field.
Relativistic Mott insulators known as ???Kitaev materials??? potentially realize spin liquids hosting non -Abelian anyons. Motivated by fault-tolerant quantum-computing applications in this setting, we introduce a dynamical anyon-generation protocol that exploits universal edge physics. The setup features holes in the spin liquid, which define energetically cheap locations for non-Abelian anyons, connected by a narrow bridge that can be tuned between spin liquid and topologically trivial phases. We show that modulating the bridge from trivial to spin liquid over intermediate time scales???quantified by analytics and extensive simulations???deposits non-Abelian anyons into the holes with O(1) probability. The required bridge manipulations can be implemented by integrating the Kitaev material into magnetic tunnel junction arrays that engender locally tunable exchange fields. Combined with existing readout strategies, our protocol reveals a path to topological qubit experiments in Kitaev materials at zero applied magnetic field.

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