Solid-State Optoelectronic Synapse Transistor Using a LaF3 Gate Dielectric

As a new generation of core components for neuromorphic computing, optoelectronic synaptic devices have the advantages of high bandwidth and less energy consumption. They can combine the functions of visual sensing, signal processing, and memory in one device. Herein, an all-solid-state optoelectronic synaptic transistor using indium gallium zinc oxide (IGZO) as the channel and lanthanum fluoride (LaF3) as the gate dielectric is designed and fabricated. Its synaptic plasticity induced by electric and optical stimuli is investigated. LaF3 is a solid superionic conductor with plenty of mobile fluoride ions, which can be used to achieve a high on/off ratio of more than 10(5) and a low subthreshold swing less than 150 mV dec(-1) in this novel synaptic transistor. Due to the ion-trapping effect at the interface, synaptic plasticity can be achieved upon electrical stimulation. Synaptic plasticity by light pulse stimuli can also be accomplished with the assistance of the persistent photoconductivity effect in IGZO channel. Furthermore, it is found that the synaptic plasticity induced by light stimuli can be modulated by gate voltage. These results provide a new way to control synaptic function and extend the function of optoelectronic synaptic devices.

Automated summary

Optoelectronic synaptic devices have high bandwidth and low energy consumption, and can combine multiple functions in one device. A solid-state optoelectronic synaptic transistor using IGZO as the channel and LaF3 as the gate dielectric is designed and fabricated, allowing investigation of synaptic plasticity induced by electric and optical stimuli. With the help of ion-trapping effect and persistent photoconductivity effect, synaptic plasticity can be achieved upon both electrical and light pulse stimuli, and the plasticity induced by light can be modulated by gate voltage.