期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 16, 期 11, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.202200173
关键词
indium gallium zinc oxide; optoelectronic devices; solid-state devices; synapse transistors
资金
- National Natural Science Foundation of China [92164206, 11774202]
- Shandong Provincial Major Scientific and Technological Innovation Project [2019JZZY020211]
- National Key RAMP
- D Program of China [2016YFA0301204]
- 111 Project [B13029]
Optoelectronic synaptic devices have high bandwidth and low energy consumption, and can combine multiple functions in one device. A solid-state optoelectronic synaptic transistor using IGZO as the channel and LaF3 as the gate dielectric is designed and fabricated, allowing investigation of synaptic plasticity induced by electric and optical stimuli. With the help of ion-trapping effect and persistent photoconductivity effect, synaptic plasticity can be achieved upon both electrical and light pulse stimuli, and the plasticity induced by light can be modulated by gate voltage.
As a new generation of core components for neuromorphic computing, optoelectronic synaptic devices have the advantages of high bandwidth and less energy consumption. They can combine the functions of visual sensing, signal processing, and memory in one device. Herein, an all-solid-state optoelectronic synaptic transistor using indium gallium zinc oxide (IGZO) as the channel and lanthanum fluoride (LaF3) as the gate dielectric is designed and fabricated. Its synaptic plasticity induced by electric and optical stimuli is investigated. LaF3 is a solid superionic conductor with plenty of mobile fluoride ions, which can be used to achieve a high on/off ratio of more than 10(5) and a low subthreshold swing less than 150 mV dec(-1) in this novel synaptic transistor. Due to the ion-trapping effect at the interface, synaptic plasticity can be achieved upon electrical stimulation. Synaptic plasticity by light pulse stimuli can also be accomplished with the assistance of the persistent photoconductivity effect in IGZO channel. Furthermore, it is found that the synaptic plasticity induced by light stimuli can be modulated by gate voltage. These results provide a new way to control synaptic function and extend the function of optoelectronic synaptic devices.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据