4.6 Article

Dual dielectric grating-assisted enhancement of Goos-Hanchen shift in monolayer graphene

期刊

PHYSICA SCRIPTA
卷 97, 期 8, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/1402-4896/ac7c97

关键词

Goos-Hanchen (GH) shifts; monolayer graphene; dielectric grating

资金

  1. National Natural Science Foundation of China (NSFC) [11774179]
  2. Jiangsu Specially Appointed Professor Plan [RK033STP16002]
  3. Natural Science Found for Colleges and Universities in Jiangsu Province [21KJA140002]
  4. Natural Science Foundation of Jiangsu Province [BK20161513]
  5. Six Categories of Summit Talents of Jiangsu Province of China [2016-JNHB-060]
  6. Training program of the Key and Major Research plan of NUPT [NY217166]
  7. NUPTSF [NY215027]
  8. 1311 Plan

向作者/读者索取更多资源

The study shows that a relatively large GH shift can be achieved in the dual dielectric grating layers with monolayer graphene by joint excitation of guided mode resonance in both the upper and lower layers. Control over the magnitude and position of GH shifts is possible by adjusting the chemical potential of monolayer graphene and the geometrical parameters of the dual dielectric grating layers. This work opens up possibilities for novel optoelectronic devices utilizing the combined structure of dual dielectric grating layers and two-dimensional layered structures.
Recently, the dielectric gratings have been used in enhancing the Goos-Hanchen (GH) shifts of monolayer graphene. However, many of these structures are limited within single dielectric grating. Dual dielectric gratings are compelling candidates for the manipulation of the light-matter interaction owing to their flexible degree of freedom in geometrical parameters. Here, we present the GH shift of the reflected wave in the dual dielectric grating layers by using rigorous coupled-wave analysis and stationary phase method, where a monolayer graphene is placed over the lower dielectric grating layer and the upper and lower dielectric grating layers have different filling factors. It is found that a relatively large GH shift, with amplitude up to more than 8000 times of the incident wavelength, can be achieved in the dual dielectric grating layers with monolayer graphene due to the joint excitation of the guided mode resonance in both the upper and lower dielectric grating layers. In addition, we can control the magnitude and position of GH shifts by changing chemical potential of monolayer graphene and the geometrical parameters of the dual dielectric grating layers. Our work opens a possibility for the improvement of the GH shift in the combined structure with the dual dielectric grating layers and the two-dimensional layered structure, which might enable the novel optoelectronic devices.

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