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Christian Golz et al.
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Ahmed Hamed et al.
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Rene H. J. Vervuurt et al.
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Omid Habibpour et al.
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Gabriele Fisichella et al.
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V. V. Kozlovski et al.
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Sofie Beyne et al.
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Xuan Sang Nguyen et al.
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Polarization doping of graphene on silicon carbide
Samir Mammadov et al.
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Huilong Xu et al.
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Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
Taekyung Lim et al.
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Virginia Wheeler et al.
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J. Ristein et al.
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Ji Eun Lee et al.
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T. Lueder et al.
PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) (2012)
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A. C. Ferrari et al.
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Analytical expressions for correction factors for noise measurements with a four-point probe
LKJ Vandamme et al.
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