Transmission data rate improvement by InGaN barriers in GaN-based blue micro-LEDs for visible light communication

A GaN-based blue micro-light-emitting diode (mu-LED) array using InGaN as barriers for In0.18Ga0.82N/In0.015Ga0.985N multiple quantum wells (MQWs) is fabricated. Compared with a conventional device using GaN as barriers, the light output power (8.8mW) exhibits an enhancement of two times. In addition, an increased transmission data rate up to 1.50 Gbps is demonstrated in a visible light communication protype. These prominent improvements are believed to relate to the suppressed quantum-confined Stark effect and the decreased defect/dislocation density in MQWs using InGaN barriers, both of which allow for higher luminescence efficiency and optical power. Consequently, the resultant higher signal-to-noise ratio in the data transmission process leads to an enhanced data rate. (C) 2022 Optica Publishing Group

Automated summary

A GaN-based blue micro-LED array with InGaN barriers has been fabricated, showing a two-fold increase in light output power compared to a conventional device. Additionally, an improved data transmission rate of up to 1.50 Gbps has been achieved in a visible light communication prototype.