Three dimensional truncated-hexagonal-pyramid vertical InGaN-based white light emitting diodes based on β-Ga2O3

In this Letter, we describe the fabrication of three dimensional (3D) truncated-hexagonal-pyramid (THP) vertical light emitting diodes (VLEDs) with white emission grown on beta-Ga2O3 substrate. In the 3D n-GaN layer, it is noted that the longitudinal growth rate of the 3D n-GaN layer increases as the flow rate of N-2 decreases and H-2 increases. Moreover, the 3D THP VLED can effectively suppress the quantumconfined Stark effect (QCSE) compared with planar VLEDs due to the semipolar facets and strain relaxation. Thus, the internal quantum efficiency (IQE) of the 3D THP VLED has been doubled and the V-shaped pits have been greatly reduced. In particular, the 3D THP VLED enables multiwavelength emission (448.0 nm and 498.5 nm) and also shows better light extraction efficiency (LEE), which presents an effective way for the realization of phosphor-free white LED devices. (C) 2022 Optica Publishing Group

Automated summary

In this Letter, the fabrication of three dimensional truncated-hexagonal-pyramid (THP) vertical light emitting diodes (VLEDs) with white emission grown on beta-Ga2O3 substrate is described. The longitudinal growth rate of the 3D n-GaN layer increases with decreasing N-2 flow rate and increasing H-2 flow rate. The 3D THP VLED effectively suppresses the quantum-confined Stark effect (QCSE) and improves the internal quantum efficiency (IQE), while reducing the V-shaped pits. Furthermore, the 3D THP VLED achieves multiwavelength emission and better light extraction efficiency (LEE), offering a promising approach for phosphor-free white LED devices.