期刊
OPTICS EXPRESS
卷 30, 期 14, 页码 25356-25365出版社
Optica Publishing Group
DOI: 10.1364/OE.462425
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资金
- Natural Science Foundation of Fujian Province [2022J02007]
- Shenzhen Science and Technology Innovation Program [JCYJ20210324115813037]
- National Science Fund for Distinguished Young Scholars [62022069]
- Fundamental Research Funds for the Central Universities [20720200068]
- National Key Research and Development Program of China [2020YFC2200400]
In this article, we theoretically investigate the propagation dynamics of mid-IR Raman soliton in a Ge28Sb12Se60 chalcogenide glass waveguide. By carefully engineering the waveguide dispersion and nonlinear interaction, we propose a suspended chalcogenide glass waveguide device that allows an octave-tuning, from 1.96 μm to 3.98 μm, Raman soliton source. Our result provides a solution to continuously tunable on-chip mid-IR ultrafast laser sources.
Photonic chip-based continuously tunable lasers are widely recognized as an indispensable component for photonic integrated circuits (PICs). Specifically, mid-infrared (mid-IR) laser sources are of paramount importance in applications such as photonic sensing and spectroscopy. In this article, we theoretically investigate the propagation dynamics of mid-IR Raman soliton in Ge28Sb12Se60 chalcogenide glass waveguide. By carefully engineer the waveguide dispersion and nonlinear interaction, we propose a suspended chalcogenide glass waveguide device that allows an octave-tuning, from 1.96 mu m to 3.98 mu m, Raman soliton source. The threshold pump energy is in the low pico-Joule range. Our result provides a solution to continuously tunable on-chip mid-IR ultrafast laser sources. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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