期刊
OPTICS EXPRESS
卷 30, 期 17, 页码 30911-30917出版社
Optica Publishing Group
DOI: 10.1364/OE.468775
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资金
- National Natural Science Foundation of China [12104329]
- Opening Foundation of the State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering
In this study, wafer-scale Al-SiO2 stack metasurfaces were experimentally fabricated to achieve perfect ultra-broadband absorption. The absorption for Al-SiO2 stack metasurfaces reached up to 98% for the wavelength range from ultraviolet to near-infrared. The results demonstrated that the absorption performance of Al-SiO2 stack metasurfaces is superior to other metal-based stack metasurfaces.
Broadband absorbers with high absorption, ultrathin thickness, and lithography-free planar structure have a wide range of potential applications, such as clocking and solar energy harvesting. For plasmonic metal materials, achieving perfect ultra-broadband absorption remains a challenge owing to the intrinsically narrow bandwidth. In this study, wafer-scale Al-SiO2 stack metasurfaces were experimentally fabricated to realize perfect ultra-broadband absorption. The experimental results show that the absorption for Al-SiO2 stack metasurfaces can reach up to 98% for the wavelength range from the ultraviolet to the near-infrared (350-1400 nm). It was experimentally verified that the absorption performance of Ai-SiO2 stack metasurfaces is dependent on the layer number and is superior to that of other metal-based stack metasurfaces. This study will pave the way for development of plasmonic metal-based ultra-broadband absorbers as in low cost and high performance robust solar energy devices. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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