Investigations of N plus -ion implanted polymethylmethacrylate for flexible electronics

The samples of Polymethylmethacrylate (PMMA) have been implanted with 700 keV N+-ions at different fluences ranging from 3 x 10(13) to 5 x 10(14) ions/cm(2) using Pelletron accelerator. The modifications in structural, electrical, morphological and optical properties of implanted polymer are examined using Raman spectrometer, Four probe technique, scanning electron microscope and UV-visible spectrometer, respectively. Raman spectroscopic analysis confirms the formation of carbonaceous structures at relatively lower fluence >= 2 x 10(14) N+/cm(2). The formation of carbonaceous network results in enhancement of conductivity of a PMMA sample from 2.14 x 10(-10) to semiconducting regime (1.06 x 10(-6) S/cm). The microscopic images show surface modifications in terms of ion-induced cracks, pores and wrinkles with increasing ion fluence. The optical bandgap reduces from 3.18 to 2.97 eV after implantation at 5 x 10(14) ions/cm(2). Moreover, the Urbach energy, photoconductivity and refractive index are found to increase with increasing ion fluence. The combination of increased electrical conductivity and reduced optical band gap energy makes PMMA a promising candidate for flexible electronics.

Automated summary

The structure, electrical properties, morphology and optical properties of PMMA samples are modified by ion implantation. The increase in electrical conductivity and decrease in optical band gap make PMMA a promising material for flexible electronics.