Atomically thin WSe2 nanosheets for fabrication of high-performance p-Si/WSe2 heterostructure

Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2D-TMDC) are picking up a great interest by providing broadband photo-response, environmental stability, and durability. The direct band gap of a monolayer of TMDC upon exfoliation enhances light absorption in the visible spectrum with pure to heterostructures form of TMDC, in turn, makes it more reliable for photodetection applications. Herein, we report a facile way to synthesize WSe2 nanosheets by solvothermal synthesis method for fabrication of large-area p-Si/WSe2 heterostructure-based photodetector. The structural, compositional, and morphological investigation asserted that prepared WSe2 nanosheets have atomically thin behavior and crystalline nature with 2H-polymorph. Moreover, the prepared p-Si/WSe2 photodiode presents promising features such as notable quick response time, high photoresponsivity of 1.15 A/W, detectivity of 1011 Jones, and external quantum efficiency of 134%, enduring for a long-time span under illumination. Thus, p-Si/WSe2 heterostructure embarks on the forefront in the development of high-performance optoelectronic device fabrication.

Automated summary

Optoelectronic devices based on two-dimensional transition metal dichalcogenides (2D-TMDC) are of great interest due to their broadband photo-response, environmental stability, and durability. Synthesized WSe2 nanosheets by solvothermal synthesis method can be used for the fabrication of high-performance photodetectors.