Optimization of electrodeposition time on the properties of Cu2ZnSnS4 thin films for thin film solar cell applications

The Electrochemical deposition was used to create a quaternary CZTS (Cu2ZnSnS4) kesterite thin layer. An aqueous solution of CZTS was used to deposit a thin layer over Indium Tin Oxide. The effects of deposition time (variation) on CZTS thin films under ambient conditions were investigated in this study. Several available characterization systems were used to study the samples as they were produced. The polycrystalline description of the layer is investigated by X-ray diffraction. The SEM as well as AFM study show that the deposition time improved surface morphology and topography of CZTS thin films which increase several nm in grain size. Furthermore, depending upon the deposition duration that affect the thickness and crystallinity of the films prepared, the optical study reveals an acceptable band gap in a range of 1.71-1.42 eV. Characteristics of high-quality CZTS absorber layers for solar cell applications are determined by deposition time variation. To check the effect of this band gap variation (1.71-1.42 eV, depending upon the deposition time) on the performance of a CZTS based thin film solar cell, a simulation software SCAPS-1D is being used.

Automated summary

In this study, a quaternary CZTS kesterite thin layer was created using electrochemical deposition, and the effects of deposition time on the thin films were investigated. The results showed that the deposition time improved the surface morphology and crystallinity of the films, leading to an acceptable band gap in the range of 1.71-1.42 eV.