4.8 Review

Semiconductor moire materials

期刊

NATURE NANOTECHNOLOGY
卷 17, 期 7, 页码 686-695

出版社

NATURE PORTFOLIO
DOI: 10.1038/s41565-022-01165-6

关键词

-

资金

  1. US Office of Naval Research [N00014-21-1-2471]
  2. National Science Foundation (NSF) [DMR- 2114535]

向作者/读者索取更多资源

This article elaborates on the recent developments and future opportunities and challenges in fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides.
This Review elaborates on the recent developments and the future opportunities and challenges of fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Moire materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moire excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moire materials.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据