Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots

Strain control and photoluminescence (PL) enhancement of InAs surface quantum dots (SQDs), exposed to ambient conditions, have been achieved by introducing underlying buried quantum dots (BQDs). The PL wavelength has been tuned from 1270 to as long as 1780 nm, redshifted as the size of the SQDs is reduced. This is in strong contrast to standard QDs, in which blueshift is observed from smaller QDs following basic quantum mechanics. Here, smaller SQDs, both in height and base area, as observed by atomic force microscopy, were obtained with wider GaAs spacer thickness between the SQDs and BQDs. The result strongly suggests that strain and related effects dominate the electronic properties of the SQDs rather than their size, and that a change in the complex strain field occurs through the spacer. The underlying BQDs also serve as effective carrier reservoirs. A PL intensity enhancement of 17 fold was observed as the GaAs spacer thickness was reduced from 150 to 10 nm. A large portion of the photoexcited carriers is initially captured and stored in the BQDs. When sufficient carriers are transferred to fill non-radiative surface states, the excess may be transferred to the SQDs enhancing the luminescence.

Automated summary

Strain control and photoluminescence enhancement of InAs surface quantum dots have been achieved by introducing buried quantum dots. The study shows that strain and related effects dominate the electronic properties of the quantum dots, and buried quantum dots act as effective carrier reservoirs.