期刊
NANO LETTERS
卷 22, 期 12, 页码 4640-4645出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c00396
关键词
van der Waals heterostructure; transition metal dichalcogenide; quantum well device; resonant tunneling
类别
资金
- JST-CREST
- JST-Mirai
- JST-PRESTO [JPMJCR15F3, JPMJCR20B4, JPMJCR16F2, JPMJMI21G9, JPMJPR20L5]
- JSPS KAKENHI [JP19H02542, JP19H01820, JP20H00127, JP20H00354, JP21H05232, JP21H05233, JP21H05234, JP21H05236, JP22H01898, JP22J22105]
- Kenjiro Takayanagi Foundation
- Inoue Foundation for Science
This study demonstrates van der Waals double quantum well (vDQW) devices based on few-layer WSe2 quantum wells and a few-layer h-BN tunnel barrier. Superior current peak-to-valley ratios were obtained for the vDQWs compared to single quantum well (QW) devices. This finding provides a new direction for utilizing few-layer-thick transition metal dichalcogenides in subband QW devices.
We demonstrate van der Waals double quantum well (vDQW) devices based on few-layer WSe2 quantum wells and a few-layer h-BN tunnel barrier. Due to the strong out-of-plane confinement, an exfoliated WSe2 exhibits quantized subband states at the Gamma point in its valence band. Here, we report resonant tunneling and negative differential resistance in vDQW at room temperature owing to momentum- and energy-conserved tunneling between the quantized subbands in each well. Compared to single quantum well (QW) devices with only one QW layer possessing quantized subbands, superior current peak-to-valley ratios were obtained for the DQWs. Our findings suggest a new direction for utilizing few-layer-thick transition metal dichalcogenides in subband QW devices, bridging the gap between two-dimensional materials and state-of-the-art semiconductor QW electronics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据