Growth characteristics of corundum-structured α-(AlxGa1-x)2O3/Ga2O3 heterostructures on sapphire substrates

We report improved growth conditions for corundum-structured alpha-(AlxGa1-x)(2)O-3, followed by the growth characteristics of alpha-(AlxGa1-x)(2)O-3/Ga2O3 heterostructures with the use of mist chemical vapor deposition (CVD) technology. Higher growth temperatures, 700-800 degrees C, were effective for better crystalline quality especially for higher Al composition chi. Coherent growth of alpha-(AlxGa1-x)(2)O-3 was achieved for x=0.03 and 0.11 with the film thickness of about 100 nm. The type-I band lineup was expected for the heterostructure. (C) 2015 Elsevier B.V. All rights reserved.