期刊
JOURNAL OF CRYSTAL GROWTH
卷 447, 期 -, 页码 36-41出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.04.022
关键词
Bridgman technique; Growth from melt; Single crystal growth; Oxides; Semiconducting gallium compounds
A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape. beta-Ga2O3 single crystals 25 mm in diameter were grown in platinum rhodium alloy crucibles in ambient air, with no adhesion of the crystals to the crucible wall. Single crystal growth without a crystal seed was realized by (100) faceted growth with a growth direction perpendicular to the (100) faceted plane. (C) 2016 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据