期刊
JOURNAL OF CRYSTAL GROWTH
卷 435, 期 -, 页码 56-61出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2015.11.025
关键词
Atomic force microscopy; Defects; High-resolution X-ray diffraction; Interfaces; Molecular beam epitaxy; Antimonides
资金
- UK Engineering and Physical Sciences Research Council [EP/P505585/1]
- Royal Academy of Engineering [EP/H04399311]
- Royal Society
- EPSRC [EP/J012904/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [1059166] Funding Source: researchfish
GaSb p-i-n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of similar to 1 x 10(8) cm(-2) were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples. (C) 2015 Elsevier B.V. All rights reserved.
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