期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 146, 期 -, 页码 -出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2022.106673
关键词
Van der Waals heterostructure; Borophene; InSe; Schottky barrier
类别
资金
- National Natural Science Foundation Joint Fund Key Project [U1865206]
- National Science and Technology Major Project [2017-VII-0012-0107]
- Guangdong Province Key Area RD Program [2019B090909002]
In this study, the electronic properties of Van der Waals heterojunctions based on InSe and borophene were investigated using first principle calculations. The results showed that the electronic structures and transport properties of the heterostructure can be modulated by controlling the interlayer distance and applying an external electric field.
In this work, we investigate the electronic properties of the Van der Waals heterojunctions based on InSe and borophene (delta; and chi(3)) by the first principle calculations. The orbital hybridizations can affect the electronic structures of InSe and borophene & UDelta; in heterostructure. The calculated tunneling barriers and the Schottky barriers indicate that the designed devices have good electronic transport. It is found that the Ohmic contact can be achieved by changing the interlayer distance. In addition, the external electric field can modulate the Schottky contact type and Schottky barriers height. The results can provide useful insight in high-performance devices based on the Borophene/InSe heterostructure.& nbsp;
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据