Electronic properties of Borophene/InSe van der Waals heterostructures

In this work, we investigate the electronic properties of the Van der Waals heterojunctions based on InSe and borophene (delta; and chi(3)) by the first principle calculations. The orbital hybridizations can affect the electronic structures of InSe and borophene & UDelta; in heterostructure. The calculated tunneling barriers and the Schottky barriers indicate that the designed devices have good electronic transport. It is found that the Ohmic contact can be achieved by changing the interlayer distance. In addition, the external electric field can modulate the Schottky contact type and Schottky barriers height. The results can provide useful insight in high-performance devices based on the Borophene/InSe heterostructure.& nbsp;

Automated summary

In this study, the electronic properties of Van der Waals heterojunctions based on InSe and borophene were investigated using first principle calculations. The results showed that the electronic structures and transport properties of the heterostructure can be modulated by controlling the interlayer distance and applying an external electric field.